Nanometer semiconductor devices having high-quality epitaxial layer

ABSTRACT

There are provided a nanometer semiconductor device with a high-quality epitaxial layer and a method of manufacturing the same. According to an embodiment, the semiconductor device may include: a substrate; at least one nanowire spaced apart from the substrate; at least one semiconductor layer, each formed around a periphery of respective one of the at least one nanowire to at least partially surround the corresponding nanowire, wherein the semiconductor layer(s) formed around the respective nanowire(s) are separated from each other; an isolation layer formed on the substrate, exposing the at least one semiconductor layer; and a gate stack formed on the isolation layer and intersecting the at least one semiconductor layer, wherein the gate stack includes a gate dielectric layer at least partially surrounding a periphery of respective one of the at least one semiconductor layer and a gate conductor layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation and claims the benefit of priority ofU.S. application Ser. No. 15/371,431, filed 7 Dec. 2016, entitled“NANOMETER SEMICONDUCTOR DEVICES HAVING HIGH-QUALITY EPITAXIAL LAYER,”which claims priority to Chinese Patent Application No. 201510888321.4,filed on Dec. 7, 2015, entitled “NANOMETER SEMICONDUCTOR DEVICES HAVINGHIGH-QUALITY EPITAXIAL LAYER AND METHODS OF MANUFACTURING THE SAME,”which applications are incorporated by reference as if reproduced hereinand made a part hereof in their entirety, and the benefit of priority ofeach of which is claimed herein.

TECHNICAL FIELD

The present disclosure relates to the field of semiconductors, andparticularly to nanometer semiconductor devices having a high-qualityepitaxial layer and methods of manufacturing the same.

BACKGROUND

With the development of semiconductor devices, it is desirable tomanufacture high-performance semiconductor devices such asMetal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) using asemiconductor material of higher mobility than that of Si. However, itis difficult to form a high-quality semiconductor material of highmobility.

SUMMARY OF THE DISCLOSURE

In view of the above, the present disclosure aims to provide, amongothers, a semiconductor device having a high-quality epitaxial layer anda method of manufacturing the same.

According to an aspect of the present disclosure, there is provided asemiconductor device, comprising: a substrate; at least one nanowirespaced apart from the substrate; at least one semiconductor layer, eachformed around a periphery of respective one of the at least one nanowireto at least partially surround the corresponding nanowire, wherein thesemiconductor layer(s) formed around the respective nanowire(s) areseparated from each other; an isolation layer formed on the substrate,exposing the at least one semiconductor layer; and a gate stack formedon the isolation layer and intersecting the at least one semiconductorlayer, wherein the gate stack includes a gate dielectric layer at leastpartially surrounding a periphery of respective one of the at least onesemiconductor layer and a gate conductor layer.

According to an aspect of the present disclosure, there is provided asemiconductor device, comprising: a substrate; at least two nanowiresspaced apart from the substrate, wherein the at least two nanowires arearranged in a direction substantially perpendicular to a surface of thesubstrate, and the at least two nanowires are separated from each otherand extend substantially parallel to each other, and among them, atleast one pair of neighboring nanowires have a crystalline structure inmirror symmetry relative to a middle line therebetween; an isolationlayer formed on the substrate, exposing the at least two nanowires; anda gate stack formed on the isolation layer and intersecting the at leasttwo nanowires, wherein the gate stack includes a gate dielectric layerat least partially surrounding a periphery of respective one of the atleast two nanowires and a gate conductor layer.

According to a further aspect of the present disclosure, there isprovided a method of manufacturing a semiconductor device, comprising:forming a fin structure on a substrate; forming a supporting layer onthe substrate having the fin structure formed thereon, and patterningthe supporting layer into a supporting portion extending from a surfaceof the substrate to a surface of the fin structure and therebyphysically connecting the fin structure to the substrate; removing aportion of the fin structure, to form at least one nanowire spaced apartfrom the substrate; and growing a semiconductor layer/semiconductorlayers with respective one of the at least one nanowire as a seed layer.

According to a still further aspect of the present disclosure, there isprovided a method of manufacturing a semiconductor device, comprising:forming a fin structure on a substrate; forming a supporting layer onthe substrate having the fin structure formed thereon, and patterningthe supporting layer into a supporting portion extending from a surfaceof the substrate to a surface of the fin structure and therebyphysically connecting the fin structure to the substrate; removing aportion of the fin structure, to form at least one nanowire spaced apartfrom the substrate; growing a semiconductor layer/semiconductor layerswith respective one of the at least two nanowire as a seed layer;forming a mask layer between the substrate and one of the semiconductorlayer(s) closest to the substrate as well as between the respectivesemiconductor layers; selectively etching the respective semiconductorlayer(s) with the at least one nanowire and the mask layer as a mask, sothat portions of the semiconductor layer(s) between the respectivenanowire(s) and the mask layer are remained; and selectively removingthe nanowire(s) and the mask layer.

According to embodiments of the present disclosure, the semiconductorlayer can be grown with the nanowire(s) suspended relative to thesubstrate as a seed layer, and the semiconductor layer can have highmobility. Such a suspended seed layer can enable relaxation of stressesin the nanowire(s) and the semiconductor layer, thereby contributing tosuppress defects in the nanowire(s) or the semiconductor layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features, and advantages of the presentdisclosure will become apparent from following descriptions ofembodiments with reference to the attached drawings, in which:

FIGS. 1-15 are schematic views illustrating a flow of manufacturing asemiconductor device according to an embodiment of the presentdisclosure;

FIGS. 16-17 are schematic views illustrating some steps in a flow ofmanufacturing a semiconductor device according to another embodiment ofthe present disclosure;

FIGS. 18-19 are schematic views illustrating some steps in a flow ofmanufacturing a semiconductor device according to a further embodimentof the present disclosure; and

FIGS. 20-24 are schematic views illustrating some steps in a flow ofmanufacturing a semiconductor device according to a still furtherembodiment of the present disclosure.

DETAILED DESCRIPTION

Hereinafter, embodiments of the present disclosure will be describedwith reference to the attached drawings. However, it should beunderstood that those descriptions are provided for illustrative purposeonly, rather than limiting the scope of the present disclosure. Further,in the following, descriptions of known structures and techniques mightbe omitted so as not to obscure the concept of the present disclosure.

In the drawings, various structures according to the embodiments areschematically shown. However, they are not drawn to scale, and somefeatures may be enlarged while some features may be omitted for sake ofclarity. Moreover, shapes and relative sizes and positions of regionsand layers shown in the drawings are also illustrative, and deviationsmay occur due to manufacture tolerances or technique limitations inpractice. Those skilled in the art can also devise regions/layers ofdifferent shapes, sizes, and relative positions as desired.

In the context of the present disclosure, when a layer/element isrecited as being “on” a further layer/element, the layer/element can bedisposed directly on the further layer/element, or otherwise there maybe an intervening layer/element interposed therebetween. Further, if alayer/element is “on” a further layer/element in an orientation, thenthe layer/element can be “under” the further layer/element when theorientation is turned.

According to embodiments of the present disclosure, there is provided asemiconductor device having a suspended fin structure. In particular,the device has a fin suspended relative to a substrate. Here, theso-called “suspended” refers to that the fin is spaced apart from thesubstrate. It is to be noted that a spacing between the fin and thesubstrate may be filled with another material (for example, an isolationlayer). The fin may comprise a semiconductor material of high mobility,to improve performances of the device. Here, the so-called “highmobility” refers to higher mobility than that of Si. The semiconductormaterial of high mobility comprises, for example, Ge, SiGe, a III-Vcompound semiconductor, or the like.

The fin may be a semiconductor layer formed (for example, epitaxiallygrown) on a nanowire above and spaced apart from the substrate. Herein,the “nanowire” refers to a line-shaped structure, having alongitudinally extending length much greater than a dimension of itscross section, which cross section is at the nanoscale. The nanowire maybe suspended relative to the substrate, e.g., extending substantiallyparallel to a surface of the substrate. Then, the semiconductor layermay be formed to at least partially surround a periphery of thenanowire, so that the semiconductor layer extends along thesubstantially same direction as the nanowire (thereby in a fin shape)and may then be used as the fin of the device. Here, the so-called“partially surround(ing)” refers to that there may be an extent of thenanowire in a longitudinal direction thereof, in which extent thesemiconductor layer can completely enclose an external surface of thenanowire. That is, in this extent, the semiconductor layer may form aclosed pattern on a cross section perpendicular to the longitudinaldirection of the nanowire, for example, a rectangle, a polygon or thelike corresponding to a shape of a cross section of the nanowire. Ofcourse, except for the surface of the nanowire covered by a supportingportion, remaining surfaces of the nanowire may also be covered by thesemiconductor layer. The nanowire may be relatively thin (for example,with a thickness of about 3-20 nm) and is suspended relative to thesubstrate. In this way, stresses in the nanowire and the semiconductorlayer can be relaxed in the growth process, and therefore it is possibleto suppress or avoid defects occurring in the nanowire or thesemiconductor layer.

Alternatively, the fin may be a portion of the semiconductor layer,which is formed as stated above, arranged on the upper side and/or lowerside of the nanowire. Remaining portions of the semiconductor layer,e.g., portions arranged on the left side and right side of the nanowire,and the nanowire may be removed. In this way, the fin may be in a formof a nanometer wire. For a semiconductor layer grown with the samenanowire as a seed, its portions arranged on the upper and lower sidesof the nanowire may be grown from upper and lower side surfaces of thenanowire, respectively, so that they can have a crystalline structure insubstantially mirror symmetry relative to a middle line therebetween.

The nanowire may be physically connected to the substrate by asupporting portion and thus is supported by the substrate. A portion ofthe nanowire connected to the supporting portion may have an extent inthe longitudinal direction of the nanowire less than a length of thenanowire in the longitudinal direction. In this way, when only thenanowire, the substrate and the supporting portion are observed as totheir positional relationship (without considering other layerstructures), the nanowire is similar to a cantilever, and the supportingportion is similar to an anchor of the cantilever.

The supporting portion may comprise a laterally extending portionextending along the surface of the substrate and a vertically extendingportion extending in a direction substantially perpendicular to thesurface of the substrate. The vertically extending portion extends ontovertical sidewalls of the nanowire which are substantially perpendicularto the surface of the substrate. In this way, the nanowire is physicallyconnected to the substrate via the supporting portion and thus issupported by the substrate. The vertically extending portion of thesupporting portion may extend on the vertical sidewalls of the nanowireon opposite sides to sandwich the nanowire.

The supporting portion may be positioned at either one or both ofopposite ends of the nanowire, or may be positioned in the middle of thenanowire.

The substrate may have an isolation layer formed thereon to electricallyisolate a gate stack of the device from the substrate. The isolationlayer may have a top surface closer to the substrate than a bottomsurface of the lowest semiconductor layer/nanowire facing the substrate,thereby exposing the respective semiconductor layers/nanowires. In thisway, the gate stack may surround the respective semiconductorlayers/nanowires (i.e., a fin of the device).

The semiconductor device may be manufactured as follows, for example.Specifically, a fin structure may be formed on the substrate. Then, aportion of the fin structure is removed to obtain at least one nanowirespaced apart from the substrate, and the at least one nanowire can besuspended relative to the substrate.

In order to support the nanowire which is to be suspended, a supportingportion may be formed. This supporting portion may be formed as follows.Specifically, a supporting layer may be formed on the substrate with thefin structure formed thereon, and then patterned into the supportingportion which extends from a surface of the substrate to a surface ofthe fin structure and therefore physically connects the fin structure tothe substrate. The supporting layer may be patterned with a mask. Themask extends on the fin structure beyond an extent of the fin structurein a direction perpendicular to a longitudinal direction of the finstructure (in this way, the mask can shield portions of the supportinglayer extending on the surface of the substrate on opposite sides of thefin structure, so that those portions can then be remained); and themask covers only a fraction of a length of the fin structure in thelongitudinal direction (in this way, the mask shields only a fraction ofa longitudinal extent of the fin structure, so that this portion canthen be connected to the supporting portion). The mask may cover eitherone or both of opposite ends of the fin structure, or cover the middleof the fin structure, and the resulting supporting portion maycorrespondingly be positioned at either one or both of the ends of thefin structure or the middle of the fin structure.

Then, a portion of the fin structure may be removed to obtain ananowire. For example, the fin structure may be separated into severalportions in a direction substantially perpendicular to the surface ofthe substrate. These portions may extend along the longitudinalextending direction of the fin structure. Some of those portions areremoved while remaining portions are kept, so that one or more nanowiresmay be formed. In this case, these nanowires may be arranged in adirection substantially perpendicular to the surface of the substrate,and the nanowires are separated from each other and extend substantiallyparallel to each other. In this way, the nanowire(s) looks like acantilever relative to the substrate, and the supporting portion lookslike an anchor of the cantilever to anchor the nanowire(s) as acantilever to the substrate.

In order to facilitate removal of the portion of the fin structure, thefin structure may comprise a stack of a sacrificial layer(s) and ananowire material layer(s) alternately stacked on the substrate. Forexample, the sacrificial layer(s) and the nanowire material layer(s) maybe formed alternately on the substrate, and then they may be patternedinto a fin structure. The patterning step may be carried out into thesubstrate, so that a protrusion may be formed on the substrate at aposition corresponding to the fin structure. Then, the material layer(s)may be selectively removed.

As the nanowire is suspended and thereby surfaces thereof are exposed, asemiconductor layer may be grown on the surfaces. Then, in a case ofsufficient growth, all of the surfaces of the nanowire (exposed by thesupporting portion) may be covered by the semiconductor layer. Thissemiconductor layer may then act as the fin of the device.

Alternatively, a mask layer may be formed between the substrate and onesemiconductor layer closest to the substrate as well as between therespective semiconductor layer(s). In this way, the respectivesemiconductor layer(s) may be etched with the nanowire(s) and the masklayer as a mask, so that portions of the semiconductor layer(s) areremained between the respective nanowire(s) and the mask layer. Theremaining portions of the semiconductor layer(s) may look likenanowires, and may then act as a fin of the device.

There are various ways to manufacture the device based on the fin. Forexample, an isolation layer may be formed on the substrate, and a gatestack intersecting the semiconductor layer may be formed on theisolation layer. The isolation layer may have a top surface lower thanthe lowest bottom surface of the semiconductor layer(s), therebyexposing the respective semiconductor layer(s). The isolation layer maybe formed by depositing a dielectric layer such as an oxide layer andthen etching it back. The supporting portion may have a differentmaterial from that of the isolation layer, and thus will not be damagedduring the back etching.

The present disclosure may be implemented in various forms, and someexamples thereof will be described below.

As shown in FIG. 1, a substrate 1001 is provided. The substrate 1001 maybe a substrate in any form, for example, but not limited to, a bulksemiconductor substrate such as a bulk silicon (Si) substrate or thelike. Hereinafter, the bulk Si substrate will be described by way ofexample for convenience of description.

A sacrificial layer 1003-1, a nanowire material layer 1005-1, asacrificial layer 1003-2 and a nanowire material layer 1005-2 are formedin sequence on the substrate 1001 by, for example, epitaxy. Thesacrificial layers 1003-1 and 1003-2 may comprise a differentsemiconductor material from those of the substrate 1001 and the nanowirematerial layers 1005-1 and 1005-2, for example, SiGe (wherein Ge mayhave an atomic percentage of, for example, about 5-20%). The sacrificiallayer 1003-1 may have a thickness of about 10-100 nm, and thesacrificial layer 1003-2 may have a thickness of about 10-50 nm (thethicknesses of the sacrificial layers may be determined depending on adesired distance between a nanowire and the substrate as well as adesired distance between two neighboring nanowires). The nanowirematerial layers 1005-1 and 1005-2 may comprise a suitable semiconductormaterial, for example, Si, with a thickness of about 3-10 nm (eachnanowire material layer's thickness may depend on a desired height ofthe nanowires). However, the present disclosure in not limited to thespecific number of the sacrificial layers and the specific number of thenanowire material layers, but may include more or less sacrificiallayers or nanowire material layers as long as they are alternatelystacked on the substrate.

Then, the nanowire material layers and the sacrificial layers (andoptionally, the substrate) which are formed in such a way may bepatterned to form a fin structure. For example, this can be done asfollows.

Specifically, a hard mask layer may be formed on the nanowire materiallayer 1005-2. In this example, the hard mask layer may comprise an oxide(for example, silicon oxide) layer 1007 and a polysilicon layer 1009.For example, the oxide layer 1007 has a thickness of about 2-10 nm, andthe polysilicon layer 1009 has a thickness of about 50-120 nm. In thisexample, the hard mask is patterned into a fin shape using a patterntransfer technology. To this end, a patterned (for example, throughexposure and development) photoresist PR may be formed on the hard masklayer. Here, the photoresist PR is patterned into a strip extendingperpendicularly to the sheet, and a width thereof (a dimension in ahorizontal direction in the figure) may approximately correspond to aspacing between two fin structures.

Next, as shown in FIG. 2, the polysilicon layer 1009 is selectivelyetched (relative to the oxide layer 1007) by, for example, Reactive IonEtching (RIE) with the photoresist PR as a mask. In this way, thepolysilicon layer 1009 may be patterned into a strip corresponding tothe photoresist PR. Then, as shown in FIG. 3(a), the photoresist PR isremoved and a spacer 1011 is formed on sidewalls of the polysiliconlayer 1009. There are various ways in the art to form the spacer. Forexample, a nitride (for example, silicon nitride) layer with a thicknessof about 3-10 nm may be deposited in a substantially conformal way by,for example, Atomic Layer Deposition (ALD), and then the depositednitride layer may be selectively etched by, for example, RIE, to removea laterally extending portion thereof so that a vertically extendingportion thereof is remained to form the spacer 1011. The spacer 1011covers the sidewalls of the Si layer 1009.

FIG. 3(b) is a top view of the structure illustrated in FIG. 3(a). It isto be noted that the spacer 1011 also exists on upper and lowersidewalls of the strip-shaped polysilicon layer 1009, although not shownin FIG. 3(b), and thereby the spacer 1011 forms a closed patternsurrounding the periphery of the strip-shaped polysilicon layer 1009.

In order to obtain a fin-shaped mask, as shown in FIGS. 4(a) and 4(b)(FIG. 4(a) is a top view, and FIG. 4(b) is a sectional view along lineAA′ in FIG. 4(a)), the polysilicon layer 1009 may be selectively removed(by, for example, a Tetramethylammonium hydroxide (TMAH) solution), andthen a patterned photoresist 1013 is formed. The photoresist 1013 mayshield the middle of the spacer 1011, and expose upper and lowerportions of the spacer 1011. The spacer 1011 is selectively etched by,for example, RIE, with the photoresist 1013 as a mask, so that thespacer 1011 which is originally in a closed pattern can be separatedinto two portions, as shown in FIG. 5. Each of those two portionscorresponds to a fin structured to be formed, which in this example is astrip extending in a vertical direction in the figure.

Then, as shown in FIG. 6, the oxide layer 1007, the nanowire materiallayer 1005-2, the sacrificial layer 1003-2, the nanowire material layer1005-1, and the sacrificial layer 1003-1 may be selectively etched insequence by, for example, RIE, with the spacer 1011 as a mask. In thisway, the pattern of the spacer 1011 is transferred into the underlyinglayers, resulting in the fin structure. Therefore, the nanowire materiallayers 1005-1 and 1005-2, after being etched, each have a width (adimension in a horizontal direction in the figure) which isapproximately the same as that of the spacer 1011 (for example, about3-10 nm). Here, the substrate 1001 may be further selectively etched.Therefore, the substrate 1001 may have a protrusion thereon at aposition corresponding to the fin structure. The fin structure has aprojection on the substrate at approximately the middle of theprotrusion. Due to characteristics of etching, the etched sacrificiallayers 1003 and the protrusion of the substrate 1001 each may have ashape increasingly enlarged from top down. Then, the spacer 1011 may beselectively removed (and the oxide layer 1007 may be further selectivelyremoved).

Although the fin structure is formed by using the pattern transfertechnology as described above, the present disclosure is not limitedthereto. For example, fin-shaped photoresist may be formed directly onthe nanowire material layer 1005-2, and the nanowire material layers,the sacrificial layers and the substrate 1001 can be selectively etchedwith the photoresist as a mask to form a fin structure. Alternatively,fin-shaped photoresist may be formed directly on the hard mask layer,the hard mask layer can be patterned into a fin shape by using thephotoresist, and then the nanowire material layers, the sacrificiallayers and the substrate 1001 can be selectively etched in sequence withthe fin-shaped hard mask layer to form a fin structure.

Here, although two fin structures are illustrated, the presentdisclosure is not limited thereto. For example, more or less finstructures may be formed. Further, a layout of the fin structures may bedifferently designed according to requirements for the device.

After the fin structure is formed, a supporting portion may be formed.For example, as shown in FIG. 7, an oxide layer 1015 and a nitride layer1017 may be formed by, for example, ALD in an approximately conformalway on the substrate with the fin structure formed thereon. The oxidelayer 1015 may have a thickness of about 1-10 nm, and the nitride layer1017 may have a thickness of about 2-15 nm. Then, as illustrated in thetop view of FIG. 8, patterned photoresist 1019 may be formed on thestructure illustrated in FIG. 7. The photoresist 1019 is patterned tocover an end (lower end in the figure) of the fin structure and extendin a horizontal direction in the figure. It is to be noted that in thetop view of FIG. 8, the topography of the nitride layer 1017 whichfluctuates along with the fin structure on the substrate is not shownmerely for convenience, and the same is true for the following topviews.

Then, as shown in FIGS. 9(a), 9(b) and 9(c) (FIG. 9(a) is a top view,FIG. 9(b) is a sectional view along line AA′ in FIG. 9(a), and FIG. 9(c)is a sectional view along line A1A1′ in FIG. 9(a)), the nitride layer1017 is selectively removed by, for example, RIE (relative to the oxidelayer 1015) with the photoresist 1019 as a mask. In this way, as shownin FIG. 9(c), the nitride layer 1017 is remained on an end (lower end inthe figure) of the fin structure and extends onto the surface of thesubstrate 1001. In this way, the fin structure is physically connectedto the substrate 1001 by the nitride layer 1017, and thus can besupported by the substrate 1001 (particularly after the sacrificiallayers 1003-1 and 1003-2 are removed as described below). Then, thephotoresist 1019 may be removed.

In the embodiment, a supporting layer which is a stack of the oxidelayer and the nitride layer is formed, and the supporting layer ispatterned into a supporting portion. However, the present disclosure isnot limited thereto. The supporting layer may comprise various suitabledielectric materials. In an embodiment in which the supporting portionis subsequently removed, the supporting layer may even comprise asemiconductor material or a conductive material.

Then, as shown in FIGS. 10(a), 10(b) and 10(c) (FIG. 10(a) is a topview, FIG. 10(b) is a sectional view along line AA′ in FIG. 10(a), andFIG. 10(c) is a sectional view along line A1A1′ in FIG. 10(a)), theoxide layer 1015 may be selectively removed by, for example, RIE(relative to the substrate 1001 and the nanowire material layers of Siand the sacrificial layers of SiGe). As shown in FIGS. 10(a) and 10(c),the oxide layer 1015 is covered by the nitride layer 1017 and thus canbe remained on the lower end of the fin structure. Then, as shown inFIGS. 11(a) and 11(b) (sectional views corresponding to those of FIGS.10(b) and 10(c), respectively), the sacrificial layers 1003-1 and 1003-2may be selectively removed by, for example, wet etching (relative to thesubstrate 1001 and the nanowire material layers 1005-1 and 1005-2 ofSi). In this way, a spacing 1021 between the nanowire material layer1005-1 and the substrate 1001 as well as between the nanowire materiallayers 1005-1 and 1005-2 is formed. Thereby, nanowire structures may beformed by means of the nanowire material layers 1005-1 and 1005-2,respectively.

FIG. 12 is a perspective view of the structure illustrated in FIG. 11.As shown in FIG. 12, the nanowires 1005-1 and 1005-2 are spaced apartfrom the substrate 1001 and also spaced apart from each other by thespacing 1021, and are supported by the substrate 1001 via the supportingportion 1015/1017. The nanowires 1005-1 and 1005-2 are arranged in adirection substantially perpendicular to the surface of the substrate(in this example, in a substantially vertical direction), and arealigned with respect to each other. In FIG. 12, merely for convenience,only two nanowires aligning with respect to each other in asubstantially vertical direction and the corresponding supportingportion are illustrated, and the residual oxide layer 1015 is not shown.

The supporting portion 1015/1017 comprises a laterally extending portionwhich extends on the surface of the substrate 1001 and a verticallyextending portion which extends in a direction approximatelyperpendicular to the surface of the substrate. In this example, thevertically extending portion may comprise a portion extending alongsurfaces of the protrusion of the substrate 1001, a portion extendingalong surfaces of the sacrificial layers (which have been removed) andalso a portion extending along the vertical sidewalls of the nanowires1005-1 and 1005-2. In this way, the supporting portion 1015/1017physically connects the nanowires 1005-1 and 1005-2 to the substrate1001, and thus can support the nanowires 1005-1 and 1005-2. Thesupporting portion 1015/1017 may extend on the vertical sidewalls of thenanowires 1005-1 and 1005-2 on opposite sides (left side and right sidein the figure), so as to sandwich the respective nanowires, thereby morestably supporting the nanowires. Of course, in this example, thesupporting portion 1015/1017 may further extend on an end of thenanowires 1005-1 and 1005-2 facing the reader. A portion of thenanowires 1005-1 and 1005-2 connected to the supporting portion1015/1017 may have an extent in a longitudinal direction of thenanowires 1005-1 and 1005-2 less than a length of the nanowires 1005-1and 1005-2 in the longitudinal direction. Here, the so-called“longitudinal direction” refers to a length direction of the nanowires(a direction perpendicular to the sheet in FIG. 11), which issubstantially the same as a length direction of a channel which is thenformed. In this way, the nanowires 1005-1 and 1005-2 each look like acantilever relative to the substrate 1001, and the cantilever isanchored to the substrate 1001 by the supporting portion 1015/1017.

In the above example, in addition to the nitride layer 1017, thesupporting portion further comprises the oxide layer 1015. However, thepresent disclosure is not limited thereto. For example, in the operationdescribed above in conjunction with FIG. 7, the oxide layer 1015 may notbe formed, and instead, only the nitride layer 1017 is formed. In thisway, subsequent operations may also be implemented in the mannerdescribed above in conjunction with FIGS. 8-11. Of course, thesupporting portion may also comprise other dielectric material or adifferent stack.

In addition, in the above example, for the two fin structures, thesupporting portion is formed on their respective lower ends. However,the present disclosure is not limited thereto. For example, for one finstructure, the supporting portion may be formed on its lower end asdescribed above; while for the other fin structure, the supportingportion may be formed at a different position, for example, on its upperend, as described below.

In addition, the mask 1019 which is used to pattern the supportingportion (as shown in FIG. 8) is not limited to the above shape.Generally, the mask may extend on the fin structure beyond an extent ofthe fin structure in a direction perpendicular to a longitudinaldirection of the fin structure. In this way, the mask may cover aportion of the nitride layer 1017 extending on the surface of thesubstrate 1001 (except for the protrusion), and thus this portion canthen be remained (as a base of the supporting portion). On the otherhand, the mask may cover only a fraction of a length of the finstructure in the longitudinal direction. In this way, a configurationsimilar to a cantilever-anchor structure may be formed.

Then, as shown in FIGS. 13(a) and 13(b) (sectional views correspondingto those of FIGS. 11(a) and 11(b), respectively), a semiconductor layer1023 may be grown on the nanowires 1005-1 and 1005-2. Here, thesemiconductor layer 1023 may comprise a material of high mobility, forexample, Ge, SiGe, or a III-V compound semiconductor, such as InSb,InGaSb, InAs, GaAs, InGaAs, AlSb, InP, group-III nitride or the like,with a thickness of about 3-20 nm. In a case of the compoundsemiconductor such as SiGe, components thereof (for example, an atomicpercentage of Ge) may change gradually, so that the compoundsemiconductor has a lattice constant which changes from being similar toa lattice constant of the nanowires 1005-1 and 1005-2 (here, Si) tobeing more different from the lattice constant of the nanowires 1005-1and 1005-2, to suppress dislocations or defects.

The growth may be selective growth, so that the semiconductor layer 1023is grown only on the surfaces of the nanowires 1005-1 and 1005-2 (andalso the substrate 1001) of the semiconductor material. The growth ofthe semiconductor layer 1023 may be controlled so that the semiconductorlayer 1023 does not completely fill the spacing 1021 between thenanowire 1005-1 and the substrate 1001 as well as between the respectivenanowires 1005-1 and 1005-2. In addition, as stated below, the remainingspacing 1021 is sufficient to form a gate dielectric layer (andoptionally a work function adjustment layer). Due to the suspensionconfiguration of the nanowires 1005-1 and 1005-2, stresses in thenanowires 1005-1 and 1005-2 and the semiconductor layer 1023 can berelaxed in the growth process. In this way, it is possible to suppressor even avoid defects occurring in the nanowires 1005-1 and 1005-2 orthe semiconductor layer 1023, which contributes to improve performancesof the device (for example, reduce an off-state leakage current orincrease an on-state current).

In this example, the nanowires 1005-1 and 1005-2 have portions of theirrespective surfaces, other than those covered by the supporting portion1015/1017, covered by the semiconductor layer. Of course, thesemiconductor layer 1023 may also be grown on the surface of thesubstrate 1001.

In this example, each of the nanowires has an extent in its longitudinaldirection, other than that covered by the supporting portion, in whichthe periphery of the nanowire is completely encapsulated by thesemiconductor layer 1023. In this way, in a cross section (i.e., thecross section illustrated in FIGS. 13(a) and 13(b)) perpendicular to thelongitudinal direction of the nanowire, the semiconductor layer 1023forms a closed pattern (which is a rectangle in this example). Ofcourse, the closed pattern is decided by a pattern of the nanowire inthe cross section, and may be in a different shape such as a polygon.

The second semiconductor layer 1023 in such a shape can act as a fin ofthe device.

After the fin 1023 is formed in the above processes, a gate stackintersecting the fin may be formed, resulting in the final semiconductordevice (for example, FinFET).

In order to isolate the gate stack from the substrate, as shown in FIGS.14(a) and 14(b) (sectional views corresponding to those of FIGS. 13(a)and 13(b), respectively), an isolation layer 1025 is firstly formed onthe substrate 1001 (in this example, on the semiconductor layer 1023formed on the substrate 1001). This isolation layer may be formed by,for example, depositing a dielectric material such as oxide on thesubstrate and then etching it back. In the back-etching process, aback-etching depth is controlled so that the resultant isolation layer1025 can expose the semiconductor layer 1023 formed around therespective nanowires.

Then, the gate stack intersecting the fin may be formed on the isolationlayer 1025. For example, this may be down as follows. Specifically, asshown in FIG. 15 (a sectional view corresponding to that of FIG. 14(a)),a gate dielectric layer 1027 and a gate conductor layer 1029 may beformed in sequence. For example, the gate dielectric layer 1027 maycomprise oxide (for example, SiO₂ or GeO₂) with a thickness of about0.3-2 nm, and the gate conductor layer 1029 may comprise polysilicon.Alternatively, the gate dielectric layer 1027 may comprise a high-K gatedielectric such as HfO₂ or Al₂O₃ with a thickness of about 1-4 nm, andthe gate conductor layer 1029 may comprise a metallic gate conductor. Ina case of high-K gate dielectric/metallic gate conductor, a workfunction adjustment layer (not shown), for example, TiN, Al, Ti, TiAlC,with a thickness of about 1-3 nm may be further formed between the gatedielectric layer 1027 and the gate conductor layer 1029.

Due to the suspended state of the nanowires 1005-1 and 1005-2, the gatedielectric layer 1027 may be formed to at least partially surround aperiphery of each of the nanowires. Also, such a gate dielectric layermaterial may be formed on a surface of the isolation layer 1025.Moreover, in a case of forming the work function adjustment layer,similarly, it may be formed to at least partially surround a peripheryof each gate dielectric layer. Also, such a work function adjustmentlayer material may be formed on the gate dielectric layer materialformed on the isolation layer 1025. In the region covered by thesupporting portion (as illustrated in FIG. 13(b)), the spacing 1021 maybe filled with the gate dielectric layer material, the work functionadjustment layer material and the gate conductor layer material.

In this example, gate stacks of devices based on the two left fins areshown to have the same configuration as gate stacks of devices based thetwo right fins, and extend as a whole, merely for convenience ofillustration. However, the present disclosure is not limited thereto.The two devices may have different gate stack configurations (forexample, a gate stack of an n-type device may be different from a gatestack of a p-type device), and respective gate stacks may be patternedaccording to a layout of the devices.

After the gate stack is formed, halo implantation and extensionimplantation may be performed with the gate stack as a mask, forexample. Next, a gate spacer may be formed on sidewalls of the gatestack. Then, source/drain (S/D) implantation may be performed with thegate stack and the gate spacer as a mask. Then, implanted ions may beactivated through annealing to form source/drain regions.

There are various ways to manufacture a device based on a fin, andprocesses after formation of the fin will not be described in detailhere.

In this way, the semiconductor device according to the embodiment isobtained. As shown in FIG. 15, the semiconductor device may comprise atleast one nanowire (1005-1, 1005-2) spaced apart from the substrate 1001but physically connected to the substrate 1001 by the supporting portion1015/1017 (as shown in FIG. 12). The second semiconductor layer 1023 isformed to surround the periphery of the respective nanowire(s) and actsas a fin of the device. In addition, the device further comprises theisolation layer 1025 and the gate stack (1027, 1029) formed on theisolation layer 1025 and intersecting the fin 1023. The gate stack mayat least partially surround the fin 1023.

In the embodiment, in the final device, the supporting portion isremained. However, the present disclosure is not limited thereto. Thesupporting portion may be selectively (at least partially) removed (forexample, after the gate stack is formed), and a space resulting from theremoval of the supporting portion may be filled with, for example,another dielectric layer.

In the above embodiment, the supporting portion is formed only on oneend of the nanowire. However, the present disclosure is not limitedthereto, and the supporting portion may be formed on opposite ends ofthe nanowire, respectively. For example, instead of the operationdescribed above in conjunction with FIG. 8, as shown in FIG. 16, thephotoresist 1019 is patterned to cover opposite ends (upper and lowerends in the figure) of the fin structure, and extend in a horizontaldirection in the figure. Subsequent operations may be performed in thesame manner as described above. In this case, a suspension structureillustrated in FIG. 17 may be obtained. In particular, as shown in FIG.17, each of the nanowires 1005-1 and 1005-2 is suspended relative to thesubstrate 1001, and opposite ends of each of the nanowires 1005-1 and1005-2 are supported by the substrate 1001 via the supporting portion1017.

Of course, the supporting portion is not limited to be formed on theend(s) of the nanowire, and may be formed at any position in thelongitudinal extent of the nanowire. For example, instead of theoperation described above in conjunction with FIG. 8, as shown in FIG.18, the photoresist 1019 is patterned to cover the middle of the finstructure, and extend in a horizontal direction in the figure.Subsequent operations may be performed in the same manner as describedabove. In this case, a suspension structure illustrated in FIG. 19 maybe obtained. In particular, as shown in FIG. 19, each of the nanowires1005-1 and 1005-2 is suspended relative to the substrate 1001, and themiddle of each of the nanowires 1005-1 and 1005-2 is supported by thesubstrate 1001 via the supporting portion 1017.

FIGS. 20-24 are views illustrating some steps in a flow of manufacturinga semiconductor device according to a still further embodiment of thepresent disclosure. The following descriptions will focus on differencesof the present embodiment from the above embodiments.

First of all, as done in the above embodiments, nanowires 1005-1 and1005-2 are formed on a substrate 1001 and semiconductor layers 1023 aregrown with the respective one of the nanowires as a seed, as illustratedin conjunction with FIGS. 1-13(b). In this embodiment, the substrate1001 may have a surface being a (111) or (110) crystal plane. Moreover,the top nanowire material layer 1005-2 may have a relatively largethickness, e.g., about 3-20 nm, because the layer will subsequentlyserve as a mask.

Since the surface of the substrate 1001 may be a (111) or (110) crystalplane, top and bottom surfaces of the nanowires 1005-1 and 1005-2 mayalso be (111) or (110) crystal planes. Then, these two surfaces mayfacilitate the growth of the semiconductor layer 1023.

Unlike the operations of forming the isolation layer as described in theabove embodiments in conjunction with FIGS. 14(a) and 14(b), whenetching back the isolation layer, as illustrated in FIG. 20, portions ofthe isolation layer between the lowest semiconductor layer 1023 and thesubstrate as well as between respective semiconductor layers 1023 arenot completely removed. These remaining portions of the isolation layer1025 may be implemented, e.g., by an undercut in the etching, and thenmay serve as a mask layer. The amount of the etching may be controlledin such a manner that the mask layer has a width substantially the sameas that of the nanowires 1005-1 and 1005-2.

It is to be noted that, while the mask layer is formed along with theback etching of the isolation layer, the present disclosure is notlimited thereto. For example, the isolation layer can be formed as shownin FIGS. 14(a) and 14(b), and then an additional dielectric layer (e.g.,a nitride layer) can be formed on top of the isolation layer. Thenitride layer can be selectively etched (thus forming an undercut) toobtain the mask layer as shown in FIG. 20.

Next, as shown in FIG. 21, the nanowires and the mask layer can be usedas masks for selectively etching (e.g., RIE) the semiconductor layers1023. Hence, portions of the semiconductor layers 1023 between therespective nanowires and the mask layer can be left. Accordingly, theremaining portions 1023-1, 1023-2 and 2013-3 of the semiconductor layers1023 can also be in a nanowire shape. The nanowires 1023-1 and 1023-2obtained from one single semiconductor 1023 can have a crystallinestructure in mirror symmetry relative to a middle line therebetween.

Then, as shown in FIG. 22, the nanowires 1005-1 and 1005-2 can beselectively removed by means of selectively etching (e.g., RIE). Also,as shown in FIG. 23, the mask layer 1025 can be removed by means ofselectively etching (e.g., RIE) (e.g., wet etching), to obtain thesuspended nanowires 1023-1, 1023-2 and 2013-3. These nanowires aresupported by the support portion at their ends or the middle thereof, asdescribed above.

These nanowires 1023-1, 1023-2 and 2013-3 each may serve as a fin of adevice. Such a fin-based device has been described above and the detailsthereof will be omitted here.

In this way, the semiconductor device according to this embodiment canbe obtained. As shown in FIG. 24, the semiconductor device can include aplurality of nanowires 1023-1, 1023-2 and 2013-3 spaced apart from thesubstrate 1001. These nanowires each may comprise a material of highmobility to serve as a fin of the device. Further, the device furtherincludes an isolation layer 1025 and a gate stack (1027, 1029) formed onthe isolation layer 1025 and intersecting the respective fins. The gatestack can at least partially surround the respective fins 1023.

The semiconductor devices according to the embodiments of the presentdisclosure are applicable to various electronic devices. For example, anIntegrated Circuit (IC) may be formed by integrating a plurality of suchsemiconductor devices and other devices (for example, transistors inother forms or the like), from which an electronic device may be made.Therefore, the present disclosure further provides an electronic devicecomprising the above semiconductor device. The electronic device mayalso comprise components such as a display operatively coupled to theintegrated circuit and a wireless transceiver operatively coupled to theintegrated circuit, or the like. Such an electronic device may comprise,for example, a smart phone, a tablet Personal Computer (PC), a PersonalDigital Assistant (PDA), or the like.

According to an embodiment of the present disclosure, there is alsoprovided a method of manufacturing a System on Chip (SoC). The methodmay comprise the above method of manufacturing the semiconductor device.In particular, a number of various devices may be integrated on a chip,and at least some of the devices are manufactured by the methodaccording to the present disclosure.

In the above descriptions, details of patterning and etching of thelayers are not described. It is to be understood by those skilled in theart that various measures may be utilized to form the layers and regionsin desired shapes. Further, to achieve the same feature, those skilledin the art can devise processes not entirely the same as those describedabove. The mere fact that the various embodiments are describedseparately does not mean that means recited in the respectiveembodiments cannot be used in combination to advantage.

The present disclosure is described above with reference to theembodiments thereof. However, those embodiments are provided only forillustrative purpose, rather than limiting the present disclosure. Thescope of the disclosure is defined by the attached claims as well asequivalents thereof. Those skilled in the art can make variousalternations and modifications without departing from the scope of thedisclosure, which all fall within the scope of the disclosure.

I/We claim:
 1. A method of manufacturing a semiconductor device,comprising: forming a fin structure on a substrate; forming a supportinglayer on the substrate having the fin structure formed thereon, andpatterning the supporting layer into a supporting portion extending froma surface of the substrate to a surface of the fin structure and therebyphysically connecting the fin structure to the substrate; removing aportion of the fin structure, to form at least one nanowire spaced apartfrom the substrate; and growing a semiconductor layer/semiconductorlayers with respective one of the at least one nanowire as a seed layer.2. A method of manufacturing a semiconductor device, comprising: forminga fin structure on a substrate; forming a supporting layer on thesubstrate having the fin structure formed thereon, and patterning thesupporting layer into a supporting portion extending from a surface ofthe substrate to a surface of the fin structure and thereby physicallyconnecting the fin structure to the substrate; removing a portion of thefin structure, to form at least one nanowire spaced apart from thesubstrate; growing a semiconductor layer/semiconductor layers withrespective one of the at least two nanowire as a seed layer; forming amask layer between the substrate and one of the semiconductor layer(s)closest to the substrate as well as between the respective semiconductorlayers; selectively etching the respective semiconductor layer(s) withthe at least one nanowire and the mask layer as a mask, so that portionsof the semiconductor layer(s) between the respective nanowire(s) and themask layer are remained; and selectively removing the nanowire(s) andthe mask layer.
 3. The method according to claim 1, wherein the finstructure comprises a stack of sacrificial layer(s) and nanowirematerial layer(s) alternately stacked on the substrate.
 4. The methodaccording to claim 3, wherein forming a fin structure comprises:patterning the nanowire material layer(s) and the sacrificial layer(s)sequentially into a fin structure.
 5. The method according to claim 3,wherein removing a portion of the fin structure comprises: selectivelyremoving the sacrificial layer(s).
 6. The method according to claim 1,wherein the semiconductor layer is grown by a selective growth method.7. The method according to claim 1, further comprising: forming anisolation layer on the substrate to expose the respective semiconductorlayer(s); and forming a gate stack intersecting the semiconductor layerson the isolation layer.
 8. The method according to claim 7, wherein whenforming the isolation layer, a portion of the isolation layer betweenthe semiconductor layer closest to the substrate and the substrate andportions between the respective semiconductor layer(s) are remained toserve as the mask layer.
 9. The method according to claim 7, whereinforming a gate stack comprises: forming a gate dielectric layer at leastpartially surrounding a periphery of respective one of the semiconductorlayer(s); and forming a gate conductor layer on the isolation layer. 10.The method according to claim 1, wherein patterning into a supportingportion comprises: forming a mask to shield a portion of the supportinglayer, wherein the mask extends on the fin structure beyond an extent ofthe fin structure in a direction perpendicular to a longitudinaldirection of the fin structure, and the mask covers only a fraction of alength of the fin structure in the longitudinal direction; selectivelyremoving a portion of the supporting layer which is not shielded; andremoving the mask.
 11. The method according to claim 10, wherein forminga mask comprises: covering either one or both of opposite ends of thefin structure with the mask or covering the middle of the fin structurewith the mask.
 12. The method according to claim 10, wherein forming asupporting layer comprises: depositing an oxide layer and a nitridelayer in sequence in a substantially conformal manner.
 13. The methodaccording to claim 12, wherein the oxide layer has a thickness of about1-10 nm and the nitride layer has a thickness of about 2-15 nm.